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NTMS4937N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
13.1
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.1
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 7.5 A
5.4
6.5
m W
V GS = 4.5 V, I D = 6.5 A
7.1
8.7
Forward Transconductance
g FS
V DS = 1.5 V, I D = 7.5 A
27.3
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
2563
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
715
25
Total Gate Charge
Q G(TOT)
17.4
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V, I D = 7.5 A
4.1
6.6
3.3
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V, I D = 7.5 A
38.5
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
12.3
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
3.6
33.8
38.9
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 2.0 A
T J = 25 ° C
T J = 125 ° C
0.72
0.56
1.0
V
Reverse Recovery Time
t RR
40
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 2.0 A
18.8
21.2
Reverse Recovery Charge
Q RR
38
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.66
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.2
1.5
Gate Resistance
R G
0.4
1.0
W
3. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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